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| aEOOCi *cA TEL:0758-2865088 18 A*cxOOCEyAA 2865091 FAX:0758-2849749 Low Frequency Power Amplifier Transistors IAE|AE*AoEy1/4U NPN Silicon (FHT8050) FEATURES IOa * Low Frequency Power Amplifier IAE|AE*Ao * Suitable for Driver Stage of Small Motor AiiCy * Complementary to FHTA8550 Oe FHTA8550 MAXIMUM RATINGS(Ta=25ae ) xioO CHARACTERISTIC IOOIEy Collector-Base Voltage 1/4cCollector-Emitter Voltage 1/4cu1/4cN *Ea1/4cN u1/4cN 1/4cA/Ao Emitter-Base Voltage *Ea1/4Collector CurrentContinuous Base Current u1/4cA/ Collector Power Dissipation 1/4cAE|AE Junction Temperature 1/2aIA Storage Temperature Range aeIAE Symbol *uA V CBO V CEO V EBO Ic IB PC Tj Tstg Rating iO 40 25 5.0 800 160 300 150 ae ae -55150 Unit I Vdc Vdc Vdc mAdc mAdc mW DEVICE MARKING oe hFE(1) FHT8050O=7O(85 200),FHT8050Y=7Y(160 ELECTRICAL CHARACTERISTICS cIOO (TA=25ae unless otherwise noted EcIIOEaEA/A Characteristic IOOIEy Collector Cutoff Current 1/4c1/2OOA/ Emitter Cutoff Current *Ea1/41/2OOcA/ Collector-Base Breakdown Voltage 1/4cu1/4/(c)cN Collector-Emitter Breakdown Voltage 1/4c*Ea1/4/(c)cN Emitter-Base Breakdown Voltage *Ea1/4u1/4/(c)cN DC Current Gain OA/cOoOae Collector-Emitter Saturation Voltage 1/4c*Ea1/4IN1/2 Base-Emitter Voltage u1/4*Ea1/4cN Transition Frequency IOO/AEAE Collector Output Capacitance EaocEY Symbol *uA ICBO IEBO V(BR)CBO V(BR)CEO V(BR)EBO hFE (1) hFE (2) V CE(sat) VBE fT Cob 300),FHT8050G=7G(280~360) 25ae ) Min xiO -- -- 40 25 5 85 40 -- -- 100 -- aI xioO -- -- -- -- -- -- -- -- 0.8 120 13 0.1 0.1 -- -- -- 360 -- V V MHz pF 0.6 1.0 -- 30 TYP Max I |I A |I A V V V Unit Test Condition aEOIo1/4 VCB=30V,IE=0 VEB=5V,IC=0 IC=100|I A IC=10mA IE=100|I A VCE=1V,IC=100mA VCE=1V,IC=800mA IC=500mA,IB=50mA VCE=1V,IC=10mA VCE=5V,IC=10mA VCB=10V,IE=0,f=1MHz Page 0 of 3 *2005 AeU 2 ae* All Rights Reserved aEOOCi *cA TEL:0758-2865088 18 A*cxOOCEyAA 2865091 FAX:0758-2849749 SOT-23 *axIIc SOT-23 DIMENSION(c) Page 1 of 3 *2005 AeU 2 ae * All Rights Reserved |
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